| PART |
Description |
Maker |
| CSB1272 |
10.000W Medium Power PNP Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 1000 - 10000 hFE.
|
Continental Device India Limited
|
| BCP69 BCP69-16 BCP69-16_DG BCP69-16_IN BCP69-25 BC |
PNP medium power transistor; 20 V, 1 A - Complement: BCP68 ; fT min: 40 MHz; hFE max: 375 ; hFE min: 85 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1350 mW; VCEO max: 20 V; Package: SOT223 (SC-73); Container: Tape reel smd
20 V, 1 A PNP medium power transistor
|
NXP Semiconductors
|
| BC51-16PA BC51-10PA BCP51-10 BC51PA |
45 V, 1A PNP medium power transistors 45伏，1安PNP型中等功率晶体管
Si, POWER TRANSISTOR
45 V, 1 A PNP medium power transistors
|
NXP Semiconductors N.V.
|
| CSB1370 CSB1370F CSB1370D CSB1370E |
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE.
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE.
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE.
PNP Silicon Epitaxial Power Transistor
|
CDIL[Continental Device India Limited]
|
| ZXTN25100BFHTA ZXTN25100BFH |
100V, SOT23, medium power transistor
|
ZETEX[Zetex Semiconductors]
|
| FZT853 |
100V NPN MEDIUM POWER TRANSISTOR
|
Diodes Incorporated
|
| FZT493-15 |
100V NPN MEDIUM POWER TRANSISTOR IN SOT223
|
Diodes Incorporated
|
| ZXTN19100CZ ZXTN19100CZTA |
100V NPN medium power transistor in SOT89
|
Diodes Incorporated
|
| ZX5T853ZTA ZX5T853Z |
100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
|
ZETEX[Zetex Semiconductors]
|
| 2SA1396 2SA1396-AZ 2SA1396M 2SA1396-K-AZ |
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 10A I(C) | SOT-186 晶体管|晶体管|进步党| 100V的五（巴西）总裁| 10A条一（c）|的SOT - 186
10 A, 100 V, PNP, Si, POWER TRANSISTOR
PNP SILICON POWER TRANSISTOR
|
NEC, Corp.
|
| MJD112-001 MJD112RL MJD112T4 MJD112T4G MJD117 MJD1 |
Power 2A 100V Darlington NPN
Power 2A 100V Darlington PNP
Complementary Darlington Power Transistors
|
ONSEMI[ON Semiconductor]
|
